Experiments on the formation of low resistance in-contacts on Al-doped ZnSe
Identifieur interne : 000828 ( Main/Exploration ); précédent : 000827; suivant : 000829Experiments on the formation of low resistance in-contacts on Al-doped ZnSe
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Abstract
The formation of low-resistance indium contacts on aluminium dopedn-type ZnSe has been followed during the heat treatment. The contacts are formed by heavy doping of the depletion zone. The increased doping results from two different mechanisms. The most important one appears to be diffusion controlled, and the other is believed to be caused by regrowth of ZnSe dissolved in the indium.
DOI: 10.1007/BF00617844
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Nøst</name><affiliation wicri:level="1"><mods:affiliation>Department of Physics, University of Oslo, Blindern-Oslo 3, Norway</mods:affiliation><country xml:lang="fr">Norvège</country><wicri:regionArea>Department of Physics, University of Oslo, Blindern-Oslo 3</wicri:regionArea><wicri:noRegion>Blindern-Oslo 3</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:339_1981_Article_BF00617844.pdf</idno><date when="1981">1981</date><idno type="doi">10.1007/BF00617844</idno><idno type="wicri:Area/Main/Corpus">000B09</idno><idno type="wicri:Area/Main/Curation">000B09</idno><idno type="wicri:Area/Main/Exploration">000828</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>73.40N</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">The formation of low-resistance indium contacts on aluminium dopedn-type ZnSe has been followed during the heat treatment. The contacts are formed by heavy doping of the depletion zone. The increased doping results from two different mechanisms. The most important one appears to be diffusion controlled, and the other is believed to be caused by regrowth of ZnSe dissolved in the indium.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="c1f4e96d66c53cd0dcf2659c9879090de9df6548"><titleInfo lang="eng"><title>Experiments on the formation of low resistance in-contacts on Al-doped ZnSe</title></titleInfo><name type="personal"><namePart type="given">A.</namePart><namePart type="family">Friberg</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Department of Physics, University of Oslo, Blindern-Oslo 3, Norway</affiliation></name><name type="personal"><namePart type="given">I.</namePart><namePart type="family">Holwech</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Department of Physics, University of Oslo, Blindern-Oslo 3, Norway</affiliation></name><name type="personal"><namePart type="given">B.</namePart><namePart type="family">Nøst</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Department of Physics, University of Oslo, Blindern-Oslo 3, Norway</affiliation></name><typeOfResource>text</typeOfResource><genre>Contributed Papers</genre><genre>Original Paper</genre><originInfo><publisher>Springer-Verlag, Berlin/Heidelberg</publisher><dateCreated encoding="w3cdtf">1981-07-06</dateCreated><dateCaptured encoding="w3cdtf">1981-08-08</dateCaptured><dateValid encoding="w3cdtf">2004-10-26</dateValid><copyrightDate encoding="w3cdtf">1981</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">The formation of low-resistance indium contacts on aluminium dopedn-type ZnSe has been followed during the heat treatment. 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A</title></titleInfo><titleInfo><title>Applied Physics A</title><subTitle>Materials Science and Processing</subTitle><partNumber>Year: 1981</partNumber><partNumber>Volume: 26</partNumber><partNumber>Number: 4</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1981-12-01</dateIssued><copyrightDate encoding="w3cdtf">1981</copyrightDate></originInfo><subject usage="primary"><topic>Physics</topic><topic>Optical and Electronic Materials</topic><topic>Nanotechnology</topic><topic>Characterization and Evaluation Materials</topic><topic>Surfaces and Interfaces, Thin Films</topic><topic>Condensed Matter</topic><topic>Operating Procedures, Materials Treatment</topic></subject><identifier type="issn">0947-8396</identifier><identifier type="issn">Electronic: 1432-0630</identifier><identifier type="matrixNumber">339</identifier><identifier type="local">IssueArticleCount: 10</identifier><recordInfo><recordOrigin>Springer-Verlag, 1981</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF00617844</identifier><identifier type="matrixNumber">Art5</identifier><identifier type="local">BF00617844</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>239</start><end>242</end></extent></part><recordInfo><recordOrigin>Springer-Verlag, 1981</recordOrigin><recordIdentifier>339_1981_Article_BF00617844.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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